IRGPS66160DPBF

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Manufacturer part number:IRGPS66160DPBF

Manufacturer:Infineon Technologies

Description:IRGPS66160DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGPS66160DPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-274AA
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Packaging	Tube
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Power Dissipation	750W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	750W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.95V
Max Collector Current	240A
Reverse Recovery Time	95 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.65V
Turn On Time	210 ns
Test Condition	400V, 120A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 120A
Turn Off Time-Nom (toff)	350 ns
Gate Charge	220nC
Current - Collector Pulsed (Icm)	360A
Td (on/off) @ 25°C	80ns/190ns
Switching Energy	4.47mJ (on), 3.43mJ (off)
Height	20.8mm
Length	16.1mm
Width	5.5mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free