SPA16N50C3XKSA1 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 460 mJ.A device's maximum input capacitance is 1600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 50 ns.A maximum pulsed drain current of 48A is the maximum peak drain current rated for this device.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In addition to 500V, it supports dual voltages up to the maximum.Its overall power consumption can be reduced by using drive voltage (10V).

SPA16N50C3XKSA1 Features

the avalanche energy rating (Eas) is 460 mJ
a continuous drain current (ID) of 16A
the turn-off delay time is 50 ns
based on its rated peak drain current 48A.

SPA16N50C3XKSA1 Applications

There are a lot of Infineon Technologies SPA16N50C3XKSA1 applications of single MOSFETs transistors.

• Server power supplies
• Motor drives and Uninterruptible Power Supplies
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• LCD/LED/ PDP TV Lighting
• General Purpose Interfacing Switch
• Lighting
• DC/DC converters
• Consumer Appliances
• Industrial Power Supplies
• Uninterruptible Power Supply