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IXTA76P10T

IXTA76P10T

IXTA76P10T

IXYS

Trans MOSFET P-CH 100V 76A 3-Pin(2+Tab) TO-263AA

SOT-23

IXTA76P10T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series TrenchP™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 298W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 298W
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Continuous Drain Current (ID) 76A
Gate to Source Voltage (Vgs) 15V
Drain-source On Resistance-Max 0.024Ohm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.90000 $4.9
50 $3.93760 $196.88
100 $3.58750 $358.75
500 $2.90500 $1452.5

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