SPB04N50C3ATMA1

new-10%

Manufacturer part number:SPB04N50C3ATMA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 560V 4.5A TO-263

Case Package:SOT-23

Datasheet:SPB04N50C3ATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	50W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	950m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id	3.9V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 25V
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Drain to Source Voltage (Vdss)	560V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	4.5A
Drain-source On Resistance-Max	0.95Ohm
Pulsed Drain Current-Max (IDM)	13.5A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	130 mJ
RoHS Status	RoHS Compliant