VMO580-02F

new-10%

Manufacturer part number:VMO580-02F

Manufacturer:IXYS

Description:MOSFET N-CH 200V 580A MODULE

Case Package:SOT-23

Datasheet:VMO580-02F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	Y3-Li
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2002
Series	HiPerFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	11
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	580A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	VMO
JESD-30 Code	R-XUFM-X11
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3.8m Ω @ 430A, 10V
Vgs(th) (Max) @ Id	4V @ 50mA
Current - Continuous Drain (Id) @ 25°C	580A Tc
Gate Charge (Qg) (Max) @ Vgs	2750nC @ 10V
Rise Time	500ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	500 ns
Turn-Off Delay Time	900 ns
Continuous Drain Current (ID)	580A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0038Ohm
Drain to Source Breakdown Voltage	200V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free