SPB35N10

new-10%

Manufacturer part number:SPB35N10

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 35A D2PAK

Case Package:SOT-23

Datasheet:SPB35N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	SIPMOS®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Current Rating	35A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	150W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	44m Ω @ 26.4A, 10V
Vgs(th) (Max) @ Id	4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds	1570pF @ 25V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	63ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	35A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.044Ohm
Avalanche Energy Rating (Eas)	245 mJ
RoHS Status	Non-RoHS Compliant