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SPD04N60C3

SPD04N60C3

SPD04N60C3

Infineon Technologies

SPD04N60C3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SPD04N60C3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish TIN
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 4.5A
Drain-source On Resistance-Max 0.95Ohm
Pulsed Drain Current-Max (IDM) 13.5A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 130 mJ
RoHS StatusRoHS Compliant
In-Stock:2818 items

SPD04N60C3 Product Details

SPD04N60C3 Description


The SPD04N60C3 is a 650V CoolMOS? N-channel Power MOSFET featuring ultra-low gate current. It is suitable for server, telecom, PC power, and adapter applications. The Operating and Storage Temperature Range is between -55 and 150??. And the MOSFET SPD04N60C3 is in the TO-252-3 package with 50W power dissipation.



SPD04N60C3 Features


  • New revolutionary high voltage technology

  • Extreme dV/dt rated

  • High peak current capability

  • Qualified according to JEDEC for target applications

  • Improved transconductance

  • Periodic avalanche rated

  • Low specific ON-state resistance

  • Very low energy storage in output capacitance (Eoss)@400V



SPD04N60C3 Applications


  • Server

  • Telecom

  • Consumer

  • PC power

  • Adapter


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