SPD06N80C3ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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SPD06N80C3ATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Supplier Device Package
PG-TO252-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
Series
CoolMOS™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Current Rating
6A
Number of Elements
1
Power Dissipation-Max
83W Tc
Power Dissipation
83W
Turn On Delay Time
25 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
900mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
785pF @ 100V
Current - Continuous Drain (Id) @ 25°C
6A Ta
Gate Charge (Qg) (Max) @ Vgs
41nC @ 10V
Rise Time
15ns
Drain to Source Voltage (Vdss)
800V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
72 ns
Continuous Drain Current (ID)
6A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
800V
Input Capacitance
785pF
Drain to Source Resistance
780mOhm
Rds On Max
900 mΩ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
SPD06N80C3ATMA1 Product Details
SPD06N80C3ATMA1 Description
SPD06N80C3ATMA1 is a CoolMOSTM Power Transistor manufactured by Infineon. The 800V CoolMOSTM Power Transistor is designed for Industrial applications with high DC bulk voltage, and Switching Applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor SPD06N80C3ATMA1 is in the TO-252-3 package with 83W power dissipation.
SPD06N80C3ATMA1 Features
Low specific on-state resistance (RDS(on)*A)
Very low energy storage in output capacitance (Eoss) @400V