IXTR32P60P

new-10%

Manufacturer part number:IXTR32P60P

Manufacturer:IXYS

Description:MOSFET P-CH 600V 18A ISOPLUS247

Case Package:SOT-23

Datasheet:IXTR32P60P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	PolarP™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	310W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	385m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	11100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	196nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	18A
Drain-source On Resistance-Max	0.385Ohm
Pulsed Drain Current-Max (IDM)	96A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	3500 mJ
RoHS Status	ROHS3 Compliant