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SPD07N60C3BTMA1

SPD07N60C3BTMA1

SPD07N60C3BTMA1

Infineon Technologies

Trans MOSFET N-CH 600V 7.3A 3-Pin(2+Tab) TO-252

SOT-23

SPD07N60C3BTMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 52 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series CoolMOS™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id 3.9V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 3.5ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 7.3A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.6Ohm
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 230 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.446902 $0.446902
10 $0.421605 $4.21605
100 $0.397741 $39.7741
500 $0.375227 $187.6135
1000 $0.353987 $353.987

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