SI4362BDY-T1-GE3

new-10%

Manufacturer part number:SI4362BDY-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 29A 8-SOIC

Case Package:SOT-23

Datasheet:SI4362BDY-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	unknown
Power Dissipation-Max	3W Ta 6.6W Tc
Element Configuration	Single
Power Dissipation	3W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.6m Ω @ 19.8A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4800pF @ 15V
Current - Continuous Drain (Id) @ 25°C	29A Tc
Gate Charge (Qg) (Max) @ Vgs	115nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±12V
Continuous Drain Current (ID)	29A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	30V
RoHS Status	ROHS3 Compliant