SPD30P06P

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SPD30P06P

Manufacturer part number:SPD30P06P

Manufacturer:Infineon Technologies

Description:SPD30P06P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SPD30P06P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2002
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-30A
[email protected] Reflow Temperature-Max (s)	20
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	75m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1.7mA
Input Capacitance (Ciss) (Max) @ Vds	1535pF @ 25V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	30A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.075Ohm
Drain to Source Breakdown Voltage	-60V
Pulsed Drain Current-Max (IDM)	120A
Avalanche Energy Rating (Eas)	250 mJ
RoHS Status	RoHS Compliant
Lead Free	Contains Lead