SPI07N65C3HKSA1

new-10%

Manufacturer part number:SPI07N65C3HKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 650V 7.3A 3-Pin(3+Tab) TO-262

Case Package:SOT-23

Datasheet:SPI07N65C3HKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Series	CoolMOS™
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Reach Compliance Code	compliant
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	83W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	600m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id	3.9V @ 350μA
Input Capacitance (Ciss) (Max) @ Vds	790pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.3A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	7.3A
Drain-source On Resistance-Max	0.0006Ohm
Pulsed Drain Current-Max (IDM)	21.9A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	230 mJ