SPI08N80C3XKSA1

new-10%

Manufacturer part number:SPI08N80C3XKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-262

Case Package:SOT-23

Datasheet:SPI08N80C3XKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH VOLTAGE
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	8A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	104W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	104W
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	650m Ω @ 5.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 470μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 100V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	800V
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.65Ohm
Pulsed Drain Current-Max (IDM)	24A
RoHS Status	RoHS Compliant
Lead Free	Lead Free