SPI80N10L

new-10%

Manufacturer part number:SPI80N10L

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 80A I2PAK

Case Package:SOT-23

Datasheet:SPI80N10L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	80A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 58A, 10V
Vgs(th) (Max) @ Id	2V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds	4540pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	240nC @ 10V
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	82 ns
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.024Ohm
Avalanche Energy Rating (Eas)	700 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free