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SPN03N60S5

SPN03N60S5

SPN03N60S5

Infineon Technologies

SPN03N60S5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

SPN03N60S5 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2004
Series CoolMOS™
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional FeatureHIGH VOLTAGE
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating700mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count4
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.8W Ta
Operating ModeENHANCEMENT MODE
Power Dissipation1.8W
Case Connection DRAIN
Turn On Delay Time35 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 5.5V @ 135μA
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 25V
Current - Continuous Drain (Id) @ 25°C 700mA Ta
Gate Charge (Qg) (Max) @ Vgs 12.8nC @ 10V
Rise Time20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 120 ns
Continuous Drain Current (ID) 700mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.7A
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 3A
Avalanche Energy Rating (Eas) 100 mJ
Height 1.6mm
Length 6.5mm
Width 3.5mm
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:2567 items

SPN03N60S5 Product Details

SPN03N60S5 Description


SPN03N60S5 is a 600V Cool MOS? Power Transistor. The 600V CoolMOS? P7 superjunction (SJ) MOSFET family is a general purpose series, targeting a broad variety of applications, ranging from low power SMPS up to the highest power levels. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor SPN03N60S5 is in the SOT-223-4 package with 1.8W power dissipation.



SPN03N60S5 Features


  • New revolutionary high voltage technology

  • Ultra-low gate charge

  • Extreme dv/dt rated

  • Ultra-low effective capacitances

  • Improved transconductance



SPN03N60S5 Applications


  • solar inverters

  • server

  • telecom

  • EV charging stations

  • Hard and soft switching topologies


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