SPN03N60S5

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SPN03N60S5

Manufacturer part number:SPN03N60S5

Manufacturer:Infineon Technologies

Description:SPN03N60S5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:SPN03N60S5 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	CoolMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	HIGH VOLTAGE
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	700mA
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	35 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.4 Ω @ 2A, 10V
Vgs(th) (Max) @ Id	5.5V @ 135μA
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 25V
Current - Continuous Drain (Id) @ 25°C	700mA Ta
Gate Charge (Qg) (Max) @ Vgs	12.8nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	120 ns
Continuous Drain Current (ID)	700mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.7A
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	3A
Avalanche Energy Rating (Eas)	100 mJ
Height	1.6mm
Length	6.5mm
Width	3.5mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead