STB21NM50N

new-10%

Manufacturer part number:STB21NM50N

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 500V 18A D2PAK

Case Package:SOT-23

Datasheet:STB21NM50N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Series	MDmesh™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	190mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	500V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
Current Rating	18A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB21N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1950pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	18ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	18A
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	72A
Dual Supply Voltage	500V
Avalanche Energy Rating (Eas)	480 mJ
Nominal Vgs	3 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free