SPP21N50C3HKSA1

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Manufacturer part number:SPP21N50C3HKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 500V 21A 3-Pin(3+Tab) TO-220

Case Package:SOT-23

Datasheet:SPP21N50C3HKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	CoolMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	208W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	208W
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	190m Ω @ 13.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Rise Time	5ns
Drain to Source Voltage (Vdss)	560V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	4.5 ns
Turn-Off Delay Time	67 ns
Continuous Drain Current (ID)	21A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	63A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	690 mJ
RoHS Status	RoHS Compliant