SPP42N03S2L-13

new-10%

Manufacturer part number:SPP42N03S2L-13

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 42A TO-220AB

Case Package:SOT-23

Datasheet:SPP42N03S2L-13 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2003
Series	OptiMOS™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	42A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	83W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.9m Ω @ 21A, 10V
Vgs(th) (Max) @ Id	2V @ 37μA
Input Capacitance (Ciss) (Max) @ Vds	1130pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	30.5nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	14.5 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	42A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0199Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	248A
Avalanche Energy Rating (Eas)	110 mJ
RoHS Status	Non-RoHS Compliant