IRFR4105ZPBF Description 

The incredibly low on-resistance per silicon area of this HEXFET? Power MOSFET is made possible by the use of cutting-edge manufacturing processes. A 175??C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to provide a highly effective and dependable gadget that may be used in a wide range of applications.

IRFR4105ZPBF Features

• Advanced Process Technology

• Ultra Low On-Resistance

• 175??C Operating Temperature

• Fast Switching

• Repetitive Avalanche Allowed up to Tjmax

IRFR4105ZPBF Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial