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SPU01N60C3BKMA1

SPU01N60C3BKMA1

SPU01N60C3BKMA1

Infineon Technologies

MOSFET N-CH 650V 0.8A TO-251

SOT-23

SPU01N60C3BKMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 11W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.8A
Drain-source On Resistance-Max 6Ohm
Pulsed Drain Current-Max (IDM) 1.6A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 20 mJ
RoHS Status RoHS Compliant

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