FDB6670AL    Description

 This N-channel logic level MOSFET FDB6670AL is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers.

The switching speed of these MOSFET is faster and the gate charge is lower than other MOSFET with similar RDS (conduction) specifications.

The result is an easy-to-drive and safer MOSFET (even at very high frequencies), and the DC/DC power supply requires higher overall efficiency.

It has been optimized for low gate charge, low RDS and fast switching speed.

FDB6670AL     Aplications

low gate charge

low RDS

fast switching speed

FDB6670AL     Features

·80A30V Rpsion)=6.5mΩ@VGs=10V

RDs(ON)=8.5mΩ@VGs=4.5V

.Critical DC electrical parameters specified at

elevated temperature

·High performance trench technology for extremely low RDs(ON)

·175℃ maximum junction temperature rating