FDB6670AL Description
This N-channel logic level MOSFET FDB6670ALis designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers.
The switching speed of these MOSFET is faster and the gate charge is lower than other MOSFET with similar RDS (conduction) specifications.
The result is an easy-to-drive and safer MOSFET (even at very high frequencies), and the DC/DC power supply requires higher overall efficiency.
It has been optimized for low gate charge, low RDS and fast switching speed.
FDB6670AL Aplications
low gate charge
low RDS
fast switching speed
FDB6670AL Features
·80A30V Rpsion)=6.5mΩ@VGs=10V
RDs(ON)=8.5mΩ@VGs=4.5V
.Critical DC electrical parameters specified at
elevated temperature
·High performance trench technology for extremely low RDs(ON)
·175℃ maximum junction temperature rating
