SPW12N50C3FKSA1

new-10%

Manufacturer part number:SPW12N50C3FKSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 560V 11.6A 3-Pin(3+Tab) TO-247

Case Package:SOT-23

Datasheet:SPW12N50C3FKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	CoolMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH VOLTAGE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	125W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	380m Ω @ 7A, 10V
Vgs(th) (Max) @ Id	3.9V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	11.6A Tc
Gate Charge (Qg) (Max) @ Vgs	49nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	560V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	11.6A
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	500V
Drain-source On Resistance-Max	0.38Ohm
Pulsed Drain Current-Max (IDM)	34.8A
Avalanche Energy Rating (Eas)	340 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free