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SIHA12N50E-E3

SIHA12N50E-E3

SIHA12N50E-E3

Vishay Siliconix

VISHAY SIHA12N50E-E3. MOSFET, N-CH, 500V, 10.5A, TO-220FP-3

SOT-23

SIHA12N50E-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220 Full Pack
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 330mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 32W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 886pF @ 100V
Current - Continuous Drain (Id) @ 25°C 10.5A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 10.5A
Threshold Voltage 4V
Drain to Source Breakdown Voltage 550V
Input Capacitance 886pF
Drain to Source Resistance 380mOhm
Rds On Max 380 mΩ
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.513795 $1.513795
10 $1.428109 $14.28109
100 $1.347273 $134.7273
500 $1.271011 $635.5055
1000 $1.199068 $1199.068

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