BSC750N10ND G

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BSC750N10ND G

Manufacturer part number:BSC750N10ND G

Manufacturer:Infineon Technologies AG

Description:BSC750N10ND G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies AG stock available on our website

Case Package:SOT-23

Datasheet:BSC750N10ND G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Number of Terminals	6
Transistor Element Material	SILICON
JESD-609 Code	e3
Pbfree Code	icon-pbfree yes
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	compliant
Time@Peak Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	R-PDSO-F6
Qualification Status	Not Qualified
Operating Temperature (Max)	150°C
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Transistor Application	SWITCHING
Polarity/Channel Type	N-CHANNEL
Drain Current-Max (Abs) (ID)	13A
Drain-source On Resistance-Max	0.075Ohm
Pulsed Drain Current-Max (IDM)	52A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	17 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)	26W
RoHS Status	RoHS Compliant