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BSO201SP H

BSO201SP H

BSO201SP H

Infineon Technologies AG

SOT-23

BSO201SP H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 8
Transistor Element Material SILICON
JESD-609 Code e3
Pbfree Code icon-pbfree yes
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Polarity/Channel Type P-CHANNEL
Drain Current-Max (Abs) (ID) 9.3A
Drain-source On Resistance-Max 0.008Ohm
Pulsed Drain Current-Max (IDM) 59.6A
DS Breakdown Voltage-Min 20V
Avalanche Energy Rating (Eas) 248 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
BSO201SP H Product Details

BSO201SP H Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 248 mJ.The drain current is the maximum continuous current this device can conduct, which is 9.3A.Pulsed drain current is maximum rated peak drain current 59.6A.A normal operation of the DS requires keeping the breakdown voltage above 20V.

BSO201SP H Features


the avalanche energy rating (Eas) is 248 mJ
based on its rated peak drain current 59.6A.


BSO201SP H Applications


There are a lot of Infineon Technologies AG
BSO201SP H applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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