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FDC3616N

FDC3616N

FDC3616N

ON Semiconductor

FDC3616N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDC3616N Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Supplier Device Package SuperSOT™-6 FLMP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 70mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1215pF @ 50V
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
FDC3616N Product Details

FDC3616N Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON), and fast switching speed.



FDC3616N Features

3.7 A, 100 V. RDS(ON) = 70 m? @ VGS = 10 V

RDS(ON) = 80 m? @ VGS = 6.0 V

High performance trench technology for extremely

low RDS(ON)

Low gate charge (23nC typical)

High power and current handling capability

Fast switching speed. 



FDC3616N Features

DC/DC converter

Load Switching 



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