FDC3616N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FDC3616N Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
6-SSOT Flat-lead, SuperSOT™-6 FLMP
Supplier Device Package
SuperSOT™-6 FLMP
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
70mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1215pF @ 50V
Current - Continuous Drain (Id) @ 25°C
3.7A Ta
Gate Charge (Qg) (Max) @ Vgs
32nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
FDC3616N Product Details
FDC3616N Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON), and fast switching speed.