FF450R12ME3

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FF450R12ME3

Manufacturer part number:FF450R12ME3

Manufacturer:Infineon Technologies AG

Description:FF450R12ME3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

Case Package:SOT-23

Datasheet:FF450R12ME3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Package / Case	EconoDUAL-3
Surface Mount	NO
Number of Terminals	11
Transistor Element Material	SILICON
Mounting Style	Chassis Mount
ECCN (US)	EAR99
Maximum Collector-Emitter Voltage (V)	1200
Typical Collector Emitter Saturation Voltage (V)	1.7
Maximum Gate Emitter Voltage (V)	±20
Maximum Power Dissipation (mW)	2100000
Maximum Continuous Collector Current (A)	600
Maximum Gate Emitter Leakage Current (uA)	0.4
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	125
Standard Package Name	ECONOD
Supplier Package	ECONOD-3
Military	No
Mounting	Screw
Package Height	17
Package Length	152
Package Width	62
PCB changed	11
Manufacturer	Infineon
Maximum Operating Temperature	+ 125 C
Minimum Operating Temperature	- 40 C
Brand	Infineon Technologies
Tradename	EconoDUAL
RoHS	Details
Package Shape	RECTANGULAR
Packaging	Tray
Series	Trench/Fieldstop IGBT3 - E3
Pbfree Code	No
Part Status	NRND
ECCN Code	EAR99
Type	Dual
Subcategory	IGBTs
Technology	Si
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
Pin Count	11
JESD-30 Code	R-XUFM-X11
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Dual
Case Connection	ISOLATED
Polarity/Channel Type	N-CHANNEL
Product Type	IGBT Modules
Channel Type	N
Power Dissipation-Max (Abs)	2100 W
Collector Current-Max (IC)	600 A
Collector-Emitter Voltage-Max	1200 V
Gate-Emitter Voltage-Max	20 V
VCEsat-Max	2.15 V
Product	IGBT Silicon Modules
Product Category	IGBT Modules
Width	62 mm
Height	17 mm
Length	152 mm
Height (mm)	20.8 mm
RoHS Status	Yes with exemptions