IRG7T300HF12B datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
IRG7T300HF12B Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Chassis Mount
Mounting Type
Chassis Mount
Package / Case
POWIR® 62 Module
Operating Temperature
-40°C~150°C TJ
Published
2014
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
1.6kW
Configuration
Half Bridge
Power - Max
1600W
Input
Standard
Collector Emitter Voltage (VCEO)
2.2V
Max Collector Current
570A
Current - Collector Cutoff (Max)
4mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Input Capacitance
42.4nF
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 300A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
42.4nF @ 25V
RoHS Status
RoHS Compliant
IRG7T300HF12B Product Details
IRG7T300HF12B Description
IRG7T300HF12B transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG7T300HF12B MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.