FF600R12KF4NOSA1

new-10%

FF600R12KF4NOSA1

Manufacturer part number:FF600R12KF4NOSA1

Manufacturer:Infineon Technologies AG

Description:FF600R12KF4NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

Case Package:SOT-23

Datasheet:FF600R12KF4NOSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	-
ECCN (US)	EAR99
Typical Collector Emitter Saturation Voltage (V)	2.7
Maximum Collector-Emitter Voltage (V)	1200
Maximum Power Dissipation (mW)	3900000
Maximum Gate Emitter Voltage (V)	±20
Maximum Continuous Collector Current (A)	600
Maximum Gate Emitter Leakage Current (uA)	0.4
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	150
Supplier Package	IHM130-2
Military	No
Mounting	Screw
Package Height	38
Package Length	140
Package Width	130
PCB changed	10
Package	Bulk
Mfr	Infineon Technologies
Product Status	Active
Packaging	Tray
Operating Temperature	150°C (TJ)
Series	-
Part Status	Obsolete
Pin Count	10
Configuration	Dual
Power - Max	3900 W
Input	Standard
Current - Collector Cutoff (Max)	8 mA
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	600 A
Channel Type	N
Vce(on) (Max) @ Vge, Ic	3.2V @ 15V, 600A
Continuous Collector Current	600
IGBT Type	-
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	45 nF @ 25 V
RoHS Status	RoHS non-compliant

Quantity	Unit Price	Ext. Price
1	$666.64000	$666.64
500	$659.9736	$329986.8
1000	$653.3072	$653307.2
1500	$646.6408	$969961.2
2000	$639.9744	$1279948.8
2500	$633.308	$1583270