FS100R12KE3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website
SOT-23
FS100R12KE3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
NO
Number of Terminals
35
Transistor Element Material
SILICON
Pbfree Code
icon-pbfree no
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
35
JESD-30 Code
R-XUFM-X35
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
6
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Case Connection
ISOLATED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
480W
Turn On Time
340 ns
Collector Current-Max (IC)
140A
Turn Off Time-Nom (toff)
610 ns
Collector-Emitter Voltage-Max
1200V
Gate-Emitter Voltage-Max
20V
VCEsat-Max
2.15 V
RoHS Status
RoHS Compliant
FS100R12KE3 Product Details
Description
The FS100R12KE3 is an IGBT, Wechselrichter/IGBT, Inverter. A three-terminal power semiconductor called an insulated-gate bipolar transistor (IGBT) is largely employed as an electronic switch. As IGBT technology advanced, it became possible to combine high efficiency with quick switching. The metal-oxide-semiconductor (MOS) gate structure governs its four alternating layers (P-N-P-N).