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FS100R12KE3

FS100R12KE3

FS100R12KE3

Infineon Technologies AG

FS100R12KE3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

SOT-23

FS100R12KE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount NO
Number of Terminals 35
Transistor Element Material SILICON
Pbfree Code icon-pbfree no
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 35
JESD-30 Code R-XUFM-X35
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 6
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 480W
Turn On Time 340 ns
Collector Current-Max (IC) 140A
Turn Off Time-Nom (toff) 610 ns
Collector-Emitter Voltage-Max 1200V
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.15 V
RoHS Status RoHS Compliant
FS100R12KE3 Product Details

Description


The FS100R12KE3 is an IGBT, Wechselrichter/IGBT, Inverter. A three-terminal power semiconductor called an insulated-gate bipolar transistor (IGBT) is largely employed as an electronic switch. As IGBT technology advanced, it became possible to combine high efficiency with quick switching. The metal-oxide-semiconductor (MOS) gate structure governs its four alternating layers (P-N-P-N).



Features


  • Integrated temperature sensor available

  • Low stray inductance module design

  • RoHS-compliant modules

  • High power density

  • Established Econo module concept



Applications


  • Motor control and drives

  • UPS (Uninterruptible Power Supply) system

  • AC and DC motor drives offering speed control

  • Chopper and inverters

  • Solar inverters


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