FZ1200R12HP4NPSA1

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FZ1200R12HP4NPSA1

Manufacturer part number:FZ1200R12HP4NPSA1

Manufacturer:Infineon Technologies AG

Description:FZ1200R12HP4NPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

Case Package:SOT-23

Datasheet:FZ1200R12HP4NPSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	NO
Number of Terminals	7
Transistor Element Material	SILICON
ECCN (US)	EAR99
Maximum Collector-Emitter Voltage (V)	1200
Typical Collector Emitter Saturation Voltage (V)	1.7
Maximum Gate Emitter Voltage (V)	±20
Maximum Power Dissipation (mW)	7150000
Maximum Continuous Collector Current (A)	1790
Maximum Gate Emitter Leakage Current (uA)	0.4
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	150
Supplier Package	IHMB130-2
Military	No
Mounting	Screw
Package Length	140
Package Width	130
PCB changed	7
Package Shape	RECTANGULAR
Manufacturer	Infineon Technologies AG
Packaging	Tray
Pbfree Code	No
Part Status	Unconfirmed
ECCN Code	EAR99
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
Pin Count	7
JESD-30 Code	R-XUFM-X7
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Dual
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Channel Type	N
Collector Current-Max (IC)	1790 A
Collector-Emitter Voltage-Max	1200 V
RoHS Status	RoHS non-compliant