MUBW30-12E6K

new-10%

Manufacturer part number:MUBW30-12E6K

Manufacturer:IXYS

Description:IGBT MODULE 1200V 30A 130W E1

Case Package:SOT-23

Datasheet:MUBW30-12E6K Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	E1
Number of Pins	1
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C TJ
Packaging	Bulk
Published	2007
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	25
Terminal Finish	Tin (Sn)
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	130W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	MUBW
Pin Count	25
JESD-30 Code	R-XUFM-X25
Qualification Status	Not Qualified
Number of Elements	7
Configuration	Three Phase Inverter with Brake
Case Connection	ISOLATED
Power - Max	130W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO)	3.6V
Max Collector Current	30A
Current - Collector Cutoff (Max)	1mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Reverse Voltage	1.6kV
Input Capacitance	1.18nF
Turn On Time	320 ns
Vce(on) (Max) @ Vge, Ic	3.6V @ 15V, 30A
Turn Off Time-Nom (toff)	500 ns
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	1.18nF @ 25V
RoHS Status	RoHS Compliant