FZ1200R17HP4B2BOSA1

new-10%

FZ1200R17HP4B2BOSA1

Manufacturer part number:FZ1200R17HP4B2BOSA1

Manufacturer:Infineon Technologies AG

Description:FZ1200R17HP4B2BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website

Case Package:SOT-23

Datasheet:FZ1200R17HP4B2BOSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
ECCN (US)	EAR99
Maximum Collector-Emitter Voltage (V)	1700
Typical Collector Emitter Saturation Voltage (V)	1.9
Maximum Gate Emitter Voltage (V)	±20
Maximum Power Dissipation (mW)	8600000
Maximum Continuous Collector Current (A)	1200
Maximum Gate Emitter Leakage Current (uA)	0.4
Minimum Operating Temperature (°C)	-40
Maximum Operating Temperature (°C)	150
Military	No
Mounting	Screw
Package Length	140
Package Width	130
PCB changed	7
Packaging	Tray
Part Status	Unconfirmed
Technology	Trench
Pin Count	7
Configuration	Dual
Channel Type	N
RoHS Status	Yes with exemptions