FZ800R12KE3 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies AG stock available on our website
SOT-23
FZ800R12KE3 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Surface Mount
NO
Number of Terminals
4
Transistor Element Material
SILICON
Pbfree Code
icon-pbfree yes
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
5
JESD-30 Code
R-XUFM-X4
Qualification Status
Not Qualified
Operating Temperature (Max)
150°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
ISOLATED
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
3550W
Turn On Time
440 ns
Collector Current-Max (IC)
1200A
Turn Off Time-Nom (toff)
1000 ns
Collector-Emitter Voltage-Max
1200V
Gate-Emitter Voltage-Max
20V
VCEsat-Max
2.15 V
RoHS Status
RoHS Compliant
FZ800R12KE3 Product Details
FZ800R12KE3 Description
FZ800R12KE3 is an 800 A single switch IGBT module with TRENCHSTOP? IGBT3 and Emitter Controlled 3 diode. Thermal interface material (TIM) is pre-applied on FZ800R12KE3 IGBT modules for repeatable thermal performance in power electronic applications. Furthermore, FZ800R12KE3 IGBT modules can be fitted using PressFIT pins for solderless and lead-free power module attachment.