IPB036N12N3 G Description

The IPB036N12N3 G is an OptiMOS? N-channel Power MOSFET offering at the same time the lowest ON-state resistance in the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS? technology gives new possibilities for optimized solutions.

IPB036N12N3 G Features

• Excellent switching performance

• World's lowest RDS (ON)

• Very low Qg and Qgd

• Excellent gate charge x RDS (ON) product (FOM)

• MSL1 rated 2

• Environmentally friendly

• Increased efficiency

• Highest power density

• Less paralleling required

IPB036N12N3 G Applications

• Power Management

• Motor Drive & Control

• Computers & Computer Peripherals

• Portable Devices

• LED Lighting