IPB039N10N3 G Description

The IPB039N10N3 G is an OptiMOS? N-channel Power MOSFET offering superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IPB039N10N3 G is in the TO-263-7 package with 214W power dissipation.

IPB039N10N3G Features

• Excellent switching performance

• World's lowest RDS (ON)

• Very low Qg and Qgd

• Excellent gate charge x RDS (ON) product (FOM)

• Environmentally friendly

• Highest power density

• Less paralleling required

• Smallest board-space consumption

• Easy-to-design products

IPB039N10N3G Applications

• Power Management

• Audio

• Motor Drive & Control

• Industrial

• Automotive