IPP041N12N3 G Description

The IPP041N12N3 G is an OptiMOS? N-channel Power MOSFET offering at the same time the lowest ON-state resistance in the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS? IPP041N12N3 G gives new possibilities for optimized solutions. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IPP041N12N3 G is in the TO-220-3 package with 300W power dissipation.

IPP041N12N3 G Features

• Excellent gate charge x RDS (ON) product (FOM)

• Very low ON-resistance RDS(on)

• Excellent gate charge x RDS (ON) product (FOM)

• MSL1 rated 2

• Environmentally friendly

• Increased efficiency

• Highest power density

• Less paralleling required

• Smallest board-space consumption

IPP041N12N3 G Applications

• Power Management

• Motor Drive & Control

• Computers & Computer Peripherals

• Portable Devices

• LED Lighting