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IS25LQ016B-JLLE-TR

IS25LQ016B-JLLE-TR

IS25LQ016B-JLLE-TR

ISSI, Integrated Silicon Solution Inc

Memory IC 8mm mm

SOT-23

IS25LQ016B-JLLE-TR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Surface Mount YES
Operating Temperature -40°C~105°C TA
Packaging Tape & Reel (TR)
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8
Technology FLASH - NOR
Voltage - Supply 2.3V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 3V
Terminal Pitch 1.27mm
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N8
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.3V
Interface SPI, Serial
Memory Size 16Mb 2M x 8
Memory Type Non-Volatile
Operating Mode SYNCHRONOUS
Clock Frequency 104MHz
Memory Format FLASH
Memory Interface SPI - Quad I/O
Organization 16MX1
Memory Width 1
Write Cycle Time - Word, Page 1ms
Memory Density 16777216 bit
Programming Voltage 2.7V
Height Seated (Max) 0.8mm
Length 8mm
Width 6mm
RoHS Status ROHS3 Compliant
IS25LQ016B-JLLE-TR Product Details

IS25LQ016B-JLLE-TR Overview


As far as its memory type goes, it falls into the Non-Volatile category. The case comes in the Tape & Reel (TR) style. Embedded in the 8-WDFN Exposed Pad case, memory ics is a single file. A memory chip with a capacity of 16Mb 2M x 8 is used on this device. FLASH-format memory is used in this device, which is a mainstream design. With an extended designed operating temperature of -40°C~105°C TA, this device is capable of lots of demanding applications. The supply voltage can be up to 2.3V~3.6V. A Surface Mount mounting type is recommended for this product. 8 terminations are planted on the chip. As many as 1 functions are supported for comprehensive working. In order to power this memory device, 3V will be necessary. In this memory, the clock frequency rotation is within an 104MHz range. Nonvolatile memory arrays require 2.7V programming voltage to change their state.

IS25LQ016B-JLLE-TR Features


Package / Case: 8-WDFN Exposed Pad

IS25LQ016B-JLLE-TR Applications


There are a lot of ISSI, Integrated Silicon Solution Inc IS25LQ016B-JLLE-TR Memory applications.

  • hard disk drive (HDD)
  • servers
  • mainframes
  • printers
  • DVD disk buffer
  • Cache memory
  • personal computers
  • nonvolatile BIOS memory
  • networking
  • embedded logic

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