FII50-12E

new-10%

Manufacturer part number:FII50-12E

Manufacturer:IXYS

Description:IGBT PHASE NPT3 ISOPLUS I4-PAC-5

Case Package:SOT-23

Datasheet:FII50-12E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	i4-Pac™-5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Published	2003
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	200W
Terminal Position	SINGLE
Pin Count	5
JESD-30 Code	R-PSIP-T5
Number of Elements	2
Configuration	Half Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	200W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	2.6V
Max Collector Current	50A
Current - Collector Cutoff (Max)	400μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	2nF
Turn On Time	135 ns
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 30A
Turn Off Time-Nom (toff)	490 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	2nF @ 25V
RoHS Status	RoHS Compliant