IXEN60N120D1

new-10%

Manufacturer part number:IXEN60N120D1

Manufacturer:IXYS

Description:IGBT MOD 1200V 100A 445W SOT227B

Case Package:SOT-23

Datasheet:IXEN60N120D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2003
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	445W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Turn On Delay Time	80 ns
Power - Max	445W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	680 ns
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	100A
Current - Collector Cutoff (Max)	800μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.1V
Input Capacitance	3.8nF
Turn On Time	130 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 60A
Turn Off Time-Nom (toff)	710 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	3.8nF @ 25V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	RoHS Compliant
Lead Free	Lead Free