VS-70MT060WHTAPBF datasheet pdf and Transistors - IGBTs - Modules product details from Vishay Semiconductor Diodes Division stock available on our website
SOT-23
VS-70MT060WHTAPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Mount
Chassis Mount, Screw
Mounting Type
Chassis Mount
Package / Case
12-MTP Module
Number of Pins
12
Operating Temperature
-40°C~150°C TJ
Published
2012
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
347W
Polarity
NPN
Configuration
Half Bridge
Element Configuration
Dual
Power - Max
347W
Input
Standard
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
100A
Current - Collector Cutoff (Max)
700μA
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.8V
Input Capacitance
8nF
Vce(on) (Max) @ Vge, Ic
3.4V @ 15V, 140A
IGBT Type
NPT
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
8nF @ 30V
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
105
$57.78657
$6067.58985
VS-70MT060WHTAPBF Product Details
VS-70MT060WHTAPBF Features
NPT warp 2 speed IGBT technology with a positive temperature coefficient
HEXFRED® antiparallel diodes with ultrasoft reverse recovery
SMD thermistor (NTC)
Al2O3 BDC
Very low stay inductance design for high-speed operation