IXFH18N100Q3

new-10%

Manufacturer part number:IXFH18N100Q3

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 18A TO-247

Case Package:SOT-23

Datasheet:IXFH18N100Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	830W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	830W
Case Connection	DRAIN
Turn On Delay Time	37 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	660m Ω @ 9A, 10V
Vgs(th) (Max) @ Id	6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4890pF @ 25V
Current - Continuous Drain (Id) @ 25°C	18A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	33ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	13 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	6.5V
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.66Ohm
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	60A
Height	16.26mm
Length	16.26mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free