SI1012X-T1-GE3

new-10%

Manufacturer part number:SI1012X-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 20V 500MA SC89-3

Case Package:SOT-23

Datasheet:SI1012X-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-89, SOT-490
Number of Pins	3
Weight	29.993795mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	700mOhm
Additional Feature	LOW THRESHOLD
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	250mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250mW
Turn On Delay Time	5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	500mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.75nC @ 4.5V
Rise Time	5ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±6V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	600mA
Threshold Voltage	900mV
Gate to Source Voltage (Vgs)	6V
Drain Current-Max (Abs) (ID)	0.5A
Drain to Source Breakdown Voltage	20V
Height	800μm
Length	1.7mm
Width	950μm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free