IXFH230N10T

new-10%

Manufacturer part number:IXFH230N10T

Manufacturer:IXYS

Description:MOSFET N-CH 100V 230A TO-247

Case Package:SOT-23

Datasheet:IXFH230N10T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2009
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	650W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	650W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.7m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	15300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	230A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	230A
JEDEC-95 Code	TO-247AD
Drain-source On Resistance-Max	0.0047Ohm
Pulsed Drain Current-Max (IDM)	500A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free