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FDN359AN

  • FDN359AN
  • FDN359AN

FDN359AN

FDN359AN

ON Semiconductor

FDN359AN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDN359AN Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 46mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 2.7A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.7A Ta
Gate Charge (Qg) (Max) @ Vgs 7nC @ 5V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 2.7A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 1.6 V
Height 1.12mm
Length 2.92mm
Width 3.05mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.23529 $0.70587
6,000 $0.22011 $1.32066
15,000 $0.20493 $3.07395
30,000 $0.19430 $5.829
FDN359AN Product Details

FDN359AN Description


The FDN359AN is a Logic Level PowerTrench MOSFET with a 30V N-Channel. Fairchild Semiconductor's innovative PowerTrench technology is used to make this N-Channel Logic Level MOSFET, which has been specifically optimized to reduce on-state resistance while maintaining exceptional switching performance. These devices are ideal for low-voltage and battery-powered applications that demand little in-line power loss and quick switching.



FDN359AN Features


  • Very fast switching.

  • Low gate charge (5nC typical).

  • 2.7 A, 30 V. RDS(ON) = 0.046 W @ VGS = 10 V RDS(ON) = 0.060 W @ VGS = 4.5 V.

  • High power version of industry-standard SOT-23 package. Identical pinout to SOT-23 with 30% higher power handling capability.



FDN359AN Applications


  • Battery Powered Circuits


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