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IXFH320N10T2

IXFH320N10T2

IXFH320N10T2

IXYS

Trans MOSFET N-CH 100V 320A 3-Pin(3+Tab) TO-247

SOT-23

IXFH320N10T2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HiPerFET™, TrenchT2™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1000W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 26000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 320A Tc
Gate Charge (Qg) (Max) @ Vgs 430nC @ 10V
Rise Time 46ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 177 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 320A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0035Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 800A
Avalanche Energy Rating (Eas) 1500 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $30.973680 $30.97368
10 $29.220453 $292.20453
100 $27.566465 $2756.6465
500 $26.006099 $13003.0495
1000 $24.534056 $24534.056

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