IXFH40N50Q2

new-10%

Manufacturer part number:IXFH40N50Q2

Manufacturer:IXYS

Description:MOSFET N-CH 500V 40A TO-247

Case Package:SOT-23

Datasheet:IXFH40N50Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
JESD-609 Code	e1
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	140mOhm
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	560W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	560W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	160m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4850pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	13ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	42 ns
Reverse Recovery Time	250 ns
Continuous Drain Current (ID)	40A
Threshold Voltage	5V
JEDEC-95 Code	TO-247AD
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	160A
Dual Supply Voltage	500V
Avalanche Energy Rating (Eas)	2500 mJ
Nominal Vgs	5 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant