SI5402BDC-T1-E3

new-10%

Manufacturer part number:SI5402BDC-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 4.9A 1206-8

Case Package:SOT-23

Datasheet:SI5402BDC-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	35mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
Number of Elements	1
Power Dissipation-Max	1.3W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	35m Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.9A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	6.7A
Threshold Voltage	20V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4.9A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	20A
Height	1.0922mm
Length	3.0988mm
Width	1.7018mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free