IXFH6N90

new-10%

Manufacturer part number:IXFH6N90

Manufacturer:IXYS

Description:MOSFET N-CH 900V 6A TO-247AD

Case Package:SOT-23

Datasheet:IXFH6N90 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	3
Resistance	1.8Ohm
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	900V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	260
Current Rating	6A
[email protected] Reflow Temperature-Max (s)	35
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	300W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2 Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	6A
Drain Current-Max (Abs) (ID)	6A
Pulsed Drain Current-Max (IDM)	24A
RoHS Status	RoHS Compliant
Lead Free	Lead Free